onsemi FDG6306P
This P−Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V).| Part No. | FDG6306P |
|---|---|
| Datasheet | FDG6306P Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● −0.6 A, −20 V ♦ RDS(ON) = 420 mW @ VGS = −4.5 V ♦ RDS(ON) = 630 mW @ VGS = −2.5 V● Low Gate Charge
● High Performance Trench Technology for Extremely Low RDS(ON)
● Compact Industry Standard SC70−6 Surface Mount Package
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Battery Management● Load Switch
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±12 V ID Drain Current − Continuous −0.6 A (Note 1) − Pulsed −2.0 PD Power Dissipation for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter RqJA Thermal Resistance, Junction−to−Ambient (Note...
