FDG6306P
FDG6306P is P-Channel 2.5V Specified PowerTrench MOSFET manufactured by Fairchild Semiconductor.
Description
This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V
- 12V).
Features
- - 0.6 A,
- 20 V.
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS =
- 4.5 V RDS(ON) = 630 mΩ @ V GS =
- 2.5 V
Applications
- Battery management
- Load switch
G 2 or 5 S 1 or 4
6 or 3 D 5 or 2 G 4 or 1 S
Pin 1
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA=25o C unless otherwise noted
Parameter
Ratings
- 20 ± 12
(Note 1)
Units
V V A W °C
- 0.6
- 2.0 0.3
- 55 to +150
Power Dissipation for Single Operation
(Note...
