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FDG6306P Datasheet

Manufacturer: Fairchild (now onsemi)
FDG6306P datasheet preview

Datasheet Details

Part number FDG6306P
Datasheet FDG6306P_FairchildSemiconductor.pdf
File Size 61.66 KB
Manufacturer Fairchild (now onsemi)
Description P-Channel 2.5V Specified PowerTrench MOSFET
FDG6306P page 2 FDG6306P page 3

FDG6306P Overview

This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V 12V).

FDG6306P Key Features

  • 0.6 A, -20 V
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • pact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS = -4.5 V RDS(ON) = 630 mΩ @ V GS = -2.5 V

FDG6306P from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ON Semiconductor Logo FDG6306P P-Channel MOSFET ON Semiconductor
Fairchild (now onsemi) logo - Manufacturer

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FDG6306P Distributor

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