Datasheet Details
| Part number | FDG6306P |
|---|---|
| Manufacturer | onsemi |
| File Size | 239.70 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDG6306P Datasheet
|
|
|
General Description
This P
of onsemi’s advanced PowerTrench process.
12 V).
Key Features
- 0.6 A,.
- 20 V.
- RDS(ON) = 420 mW @ VGS =.
- 4.5 V.
- RDS(ON) = 630 mW @ VGS =.
- 2.5 V.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low RDS(ON).
- Compact Industry Standard SC70.
- 6 Surface Mount Package.
- These Devices are Pb.
- Free and are RoHS Compliant.