FDG6306P Datasheet Text
DATA SHEET .onsemi.
MOSFET- Specified, P-Channel, POWERTRENCH)
2.5 V
FDG6306P
General Description This P- Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V
- 12 V).
Features
- - 0.6 A,
- 20 V
- RDS(ON) = 420 mW @ VGS =
- 4.5 V
- RDS(ON) = 630 mW @ VGS =
- 2.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70- 6 Surface Mount Package
- These Devices are Pb- Free and are RoHS pliant
Applications
- Battery Management
- Load...
