Datasheet4U Logo Datasheet4U.com

FDG6301N - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 25V.
  • ID = 220m A (VGS = 4.5V).
  • RDS(ON) ＜ 4Ω (VGS = 4.5V).
  • RDS(ON) ＜ 5Ω (VGS = 2.7V).
  • Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). 1 or 4 6 or 3 2 or 5 5 or 2 3 or 6 4 or 1 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Electrostatic Discharge Rating MIL-STD-883D Human Body Model(100 pF / 1500 W) Power Dissipati.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDG6301N Dual N-Channel/ Digital FET Fairchild Semiconductor
FDG6301N Dual N-Channel Digital FET ON Semiconductor
FDG6301N 20V Dual N-Channel MOSFET VBsemi
FDG6301N-F085 Dual N-Channel Digital FET ON Semiconductor
FDG6302P Dual P-Channel/ Digital FET Fairchild Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Dual N-Channel MOSFET FDG6301N (KDG6301N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 220m A (VGS = 4.5V) ● RDS(ON) ＜ 4Ω (VGS = 4.5V) ● RDS(ON) ＜ 5Ω (VGS = 2.7V) ● Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). 1 or 4 6 or 3 2 or 5 5 or 2 3 or 6 4 or 1 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Electrostatic Discharge Rating MIL-STD-883D Human Body Model(100 pF / 1500 W) Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID ESD PD RthJA TJ Tstg Rating 25 ±8 220 650 6 300 415 150 -55 to 150 Unit V mA KV mW ℃/W ℃ www.kexin.com.