FDG6302P Datasheet Dual P-channel/ Digital Fet

Manufacturer: Fairchild (now onsemi)

Overview: July 1999 FDG6302P Dual P-Channel, Digital FET General.

Datasheet Details

Part number	FDG6302P
Manufacturer	Fairchild (now onsemi)
File Size	302.73 KB
Description	Dual P-Channel/ Digital FET
Datasheet	FDG6302P_FairchildSemiconductor.pdf

General Description

These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Key Features

-25 V, -0.14 A continuous, -0.4 A peak. RDS(ON) = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. SC70-6 SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 D1 G2 S2 .02 G1 D2 1 or 4.
6 or 3 2 or 5 5 or 2 . SC70-6 S1 3 or 6 4 or 1.
The pinouts are sy.

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