| Part number | FDG6302P |
|---|---|
| Datasheet | FDG6302P_FairchildSemiconductor.pdf |
| File Size | 302.73 KB |
| Manufacturer | Fairchild (now onsemi) |
| Description | Dual P-Channel/ Digital FET |
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These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
See all Fairchild (now onsemi) datasheets
| Part Number | Description |
|---|---|
| FDG6301N | Dual N-Channel/ Digital FET |
| FDG6303N | Dual N-Channel Digital FET |
| FDG6304P | Dual P-Channel/ Digital FET |
| FDG6306P | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDG6308P | P-Channel MOSFET |
| FDG6313N | Dual N-Channel Digital FET |
| FDG6316P | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDG6317NZ | Dual 20v N-Channel PowerTrench MOSFET |
| FDG6318P | Dual P-Channel/ Digital FET |
| FDG6318PZ | Dual P-Channel/ Digital FET |
