Datasheet Details
| Part number | FDG6303N |
|---|---|
| Manufacturer | onsemi |
| File Size | 231.96 KB |
| Description | Dual N-Channel Digital FET |
| Datasheet |
 FDG6303N Datasheet
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General Description
These dual N
transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
state resistance.
Key Features
- 25 V, 0.50 A Continuous, 1.5 A Peak RDS(ON) = 0.45 W @ VGS = 4.5 V RDS(ON) = 0.60 W @ VGS = 2.7 V.
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
- Gate.
- Source Zener for ESD Ruggedness (>6 kV Human Body Model).
- Compact Industry Standard SC70.
- 6 Surface Mount Package.
- These Devices are Pb.
- Free and are RoHS Compliant.