FDG6303N - Dual N-Channel Digital FET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDG6303N
Manufacturer	ON Semiconductor
File Size	231.96 KB
Description	Dual N-Channel Digital FET
Datasheet	FDG6303N Datasheet
Additional preview pages of the FDG6303N datasheet.

Product details

Description

These dual N Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance.

Features

25 V, 0.50 A Continuous, 1.5 A Peak  RDS(ON) = 0.45 W @ VGS = 4.5 V  RDS(ON) = 0.60 W @ VGS = 2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
Gate.
Source Zener for ESD Ruggedness (>6 kV Human Body Model).
Compact Industry Standard SC70.
6 Surface Mount Package.
These Devices are Pb.
Free and are RoHS Compliant.

📁 Similar Datasheet

FDG6301N - Dual N-Channel/ Digital FET (Fairchild Semiconductor)
FDG6302P - Dual P-Channel/ Digital FET (Fairchild Semiconductor)
FDG6308P - P-Channel MOSFET (Fairchild Semiconductor)
FDG6313N - Dual N-Channel Digital FET (Fairchild Semiconductor)
FDG6316P - P-Channel 1.8V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDG6318P - Dual P-Channel/ Digital FET (Fairchild Semiconductor)
FDG6318PZ - Dual P-Channel/ Digital FET (Fairchild Semiconductor)
FDG6322C - Dual N & P Channel Digital FET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDG6301N-F085 - Dual N-Channel Digital FET
FDG6304P - Dual P-Channel Digital FET
FDG6306P - P-Channel MOSFET
FDG6317NZ - Dual N-Channel MOSFET
FDG6320C - Dual-Channel Digital FET
FDG6321C - Dual-Channel Digital FET

Published: Jan 24, 2023 |