VBsemi Electronics FDG6301N
20V Dual N-Channel MOSFET
| Part No. | FDG6301N |
|---|---|
| Datasheet | FDG6301N Download |
| Manufacturer | VBsemi Electronics |
| Description | 20V Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-363 SC-70● Load Switch for Portable
APPLICATIONS
D1 D2 S1 1 6 D1 G1 G2 G1 2 5 G2 D2 3 4 S2 Top View S1 S2ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 TC = 25 °C 2.6a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 2.2a 2.3a, b, c TA = 70 °C 1.8b, c A Pulsed Drain Current IDM 8 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 2.3 2.10b, c TC = 25 °C 2.70 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C 1.70 1.5b, c W 1.0 b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t≤5s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d.
