Datasheet4U Logo Datasheet4U.com

FDG6308P Datasheet P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDG6308P January 2001 FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET.

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Applications • Battery management • Load switch

Key Features

  • 0.6 A,.
  • 20 V. RDS(ON) = 0.40 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.55 Ω @ VGS =.
  • 2.5 V RDS(ON) = 0.80 Ω @ VGS =.
  • 1.8 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • Compact industry standard SC70-6 surface mount package S G D S 1 or 4 Pin 1 D G S G 2 or 5 D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. 6 or 3 D 5 or 2 G 4 or 1 S Absolute Maximum Ra.

FDG6308P Distributor

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDG6301N Dual N-Channel/ Digital FET
FDG6302P Dual P-Channel/ Digital FET
FDG6303N Dual N-Channel Digital FET
FDG6304P Dual P-Channel/ Digital FET
FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET
FDG6313N Dual N-Channel Digital FET
FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET
FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET
FDG6318P Dual P-Channel/ Digital FET
FDG6318PZ Dual P-Channel/ Digital FET