FDG6308P
FDG6308P is P-Channel MOSFET manufactured by Fairchild Semiconductor.
January 2001
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Applications
- Battery management
- Load switch
Features
- - 0.6 A,
- 20 V.
RDS(ON) = 0.40 Ω @ VGS =
- 4.5 V RDS(ON) = 0.55 Ω @ VGS =
- 2.5 V RDS(ON) = 0.80 Ω @ VGS =
- 1.8 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC70-6 surface mount package
S 1 or 4
Pin 1
G 2 or 5 D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable....
