FDG6308P
Overview
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
- -0.6 A, -20 V. RDS(ON) = 0.40 Ω @ VGS = -4.5 V RDS(ON) = 0.55 Ω @ VGS = -2.5 V RDS(ON) = 0.80 Ω @ VGS = -1.8 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- Compact industry standard SC70-6 surface mount package S G
- S 1 or 4 Pin 1
- G S G 2 or 5
- 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. 6 or 3
- 5 or 2 G 4 or 1 S
