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FDG6308P - P-Channel MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Battery management Load switch

Key Features

  • 0.6 A,.
  • 20 V. RDS(ON) = 0.40 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.55 Ω @ VGS =.
  • 2.5 V RDS(ON) = 0.80 Ω @ VGS =.
  • 1.8 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • Compact industry standard SC70-6 surface mount package S G D S 1 or 4 Pin 1 D G S G 2 or 5 D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. 6 or 3 D 5 or 2 G 4 or 1 S Absolute Maximum Ra.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDG6308P January 2001 FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –0.6 A, –20 V. RDS(ON) = 0.40 Ω @ VGS = –4.5 V RDS(ON) = 0.55 Ω @ VGS = –2.5 V RDS(ON) = 0.80 Ω @ VGS = –1.8 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package S G D S 1 or 4 Pin 1 D G S G 2 or 5 D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.