FDG6308P - P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDG6308P
Manufacturer	Fairchild Semiconductor
File Size	89.94 KB
Description	P-Channel MOSFET
Datasheet	FDG6308P Datasheet
Additional preview pages of the FDG6308P datasheet.

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Battery management Load switch

0.6 A,.
20 V. RDS(ON) = 0.40 Ω @ VGS =.
4.5 V RDS(ON) = 0.55 Ω @ VGS =.
2.5 V RDS(ON) = 0.80 Ω @ VGS =.
1.8 V.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC70-6 surface mount package S G D S 1 or 4 Pin 1 D G S G 2 or 5 D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. 6 or 3 D 5 or 2 G 4 or 1 S Absolute Maximum Ra.

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Published: Mar 30, 2005 |