Datasheet Summary
Digital FET, Dual N-Channel FDG6301N
General Description These dual N- Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
- 25 V, 0.22 A Continuous, 0.65 A Peak
RDS(ON) = 4 W @ VGS = 4.5 V RDS(ON) = 5 W @ VGS = 2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits (VGS(th) < 1.5 V)
- Gate- Source Zener for ESD Ruggedness (>6 kV...
