FDG6301N
Overview
These dual N-Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
- 25 V, 0.22 A Continuous, 0.65 A Peak RDS(ON) = 4 W @ VGS = 4.5 V RDS(ON) = 5 W @ VGS = 2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V)
- Gate-Source Zener for ESD Ruggedness (>6 kV Human Body Model)
- Compact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS Compliant
