FDG6301N - Dual N-Channel Digital FET

Product Overview

ON Semiconductor

Part number	FDG6301N
Manufacturer	ON Semiconductor
File Size	233.56 KB
Description	Dual N-Channel Digital FET
Datasheet	FDG6301N Datasheet
Additional preview pages of the FDG6301N datasheet.

These dual N

transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

25 V, 0.22 A Continuous, 0.65 A Peak  RDS(ON) = 4 W @ VGS = 4.5 V  RDS(ON) = 5 W @ VGS = 2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
Gate.
Source Zener for ESD Ruggedness (>6 kV Human Body Model).
Compact Industry Standard SC70.
6 Surface Mount Package.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Jan 23, 2023 |