| Part Number | FDG6301N Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
These dual N−Channel logic level enhancement mode field effect
transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tai.
* 25 V, 0.22 A Continuous, 0.65 A Peak RDS(ON) = 4 W @ VGS = 4.5 V RDS(ON) = 5 W @ VGS = 2.7 V * Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V) * Gate *Source Zener for ESD Ruggedness (>6 kV Human Body Model) * Compact Industry Standard SC70 *6 S. |
FDG6301N Datasheet and Specifications PDF
The FDG6301N is a Dual N-Channel Digital FET.
| Part Number | FDG6301N Datasheet |
|---|---|
| Description | 20V Dual N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
FDG6301N-VB
FDG6301N-VB Datasheet
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.086 at VGS = 4.5 V 0.110 at VGS = 2.5 V 0.180 at VGS = 1.8 V
ID (A)a 2.
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 * Load Switch for Portable Applications D1 D2 S1 1 6 D1 G1 G2 G1 2 5 G2 D2 3 4 S2 Top View S1 S2 ABSOLUTE MAXIMUM RATINGS . |
| Part Number | FDG6301N Datasheet |
|---|---|
| Description | Dual N-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
Dual N-Channel MOSFET FDG6301N (KDG6301N)
MOSFET
■ Features
● VDS (V) = 25V ● ID = 220m A (VGS = 4.5V) ● RDS(ON) ＜ 4Ω (VGS = 4.5V) ● RDS(ON) ＜ 5Ω (VGS = 2.7V) ● Gate-Source Zener for ESD r.
* VDS (V) = 25V * ID = 220m A (VGS = 4.5V) * RDS(ON) ＜ 4Ω (VGS = 4.5V) * RDS(ON) ＜ 5Ω (VGS = 2.7V) * Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). 1 or 4 6 or 3 2 or 5 5 or 2 3 or 6 4 or 1 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1 * Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Sou. |
| Part Number | FDG6301N Datasheet |
|---|---|
| Description | Dual N-Channel/ Digital FET |
| Manufacturer | Fairchild Semiconductor |
| Overview | These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially . 25 V, 0.22 A continuous, 0.65 A peak. RDS(ON) = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mou. |