Datasheet Summary
Digital FET, Dual P-Channel FDG6304P
General Description These dual P- Channel logic level enhancement mode field effect transistors are produced using onsemi proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
- - 25 V,
- 0.41 A Continuous,
- 1.5 A Peak
RDS(ON) = 1.1 W @ VGS =
- 4.5 V RDS(ON) = 1.5 W @ VGS =
- 2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits (VGS(th) < 1.5 V)
- Gate- Source Zener for ESD Ruggedness...
