| Part Number | FDG6304P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
These dual P−Channel logic level enhancement mode field effect
transistors are produced using onsemi proprietary, high cell density, DMOS technology. This very high density process is especially tailo.
* *25 V, *0.41 A Continuous, *1.5 A Peak RDS(ON) = 1.1 W @ VGS = *4.5 V RDS(ON) = 1.5 W @ VGS = *2.7 V * Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V) * Gate *Source Zener for ESD Ruggedness (>6 kV Human Body Model) * Compact Industry Standard . |
FDG6304P Datasheet and Specifications PDF
The FDG6304P is a Dual P-Channel Digital FET.
| Part Number | FDG6304P Datasheet |
|---|---|
| Description | Dual P-Channel/ Digital FET |
| Manufacturer | Fairchild Semiconductor |
| Overview | These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially . -25 V, -0.41 A continuous, -1.5 A peak. RDS(ON) = 1.1 Ω @ VGS= -4.5 V, RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 sur. |