FDG6304P
Overview
These dual P-Channel logic level enhancement mode field effect transistors are produced using onsemi proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
- -25 V, -0.41 A Continuous, -1.5 A Peak RDS(ON) = 1.1 W @ VGS = -4.5 V RDS(ON) = 1.5 W @ VGS = -2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V)
- Gate-Source Zener for ESD Ruggedness (>6 kV Human Body Model)
- Compact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS Compliant
