FDG6306P Datasheet and Specifications PDF

The FDG6306P is a P-Channel 2.5V Specified PowerTrench MOSFET.

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Part NumberFDG6306P Datasheet
ManufacturerFairchild Semiconductor
Overview This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of .
*
*0.6 A,
*20 V.
* Low gate charge
* High performance trench technology for extremely low RDS(ON)
* Compact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS =
*4.5 V RDS(ON) = 630 mΩ @ V GS =
*2.5 V Applications
* Battery management
* Load switch S G D G 2 or 5 S 1 or 4 6 or.
Part NumberFDG6306P Datasheet
DescriptionP-Channel MOSFET
Manufactureronsemi
Overview This P−Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage.
*
*0.6 A,
*20 V
* RDS(ON) = 420 mW @ VGS =
*4.5 V
* RDS(ON) = 630 mW @ VGS =
*2.5 V
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(ON)
* Compact Industry Standard SC70
*6 Surface Mount Package
* These Devices are Pb
*Free and are RoHS Compliant Applications
* Battery Mana.