onsemi FDMA3023PZ
This Device is Designed Specifically as a Single Package Solution for the battery charge switch in cellular handset and other Ultra−Portable Applications. It features two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses.| Part No. | FDMA3023PZ |
|---|---|
| Datasheet | FDMA3023PZ Download |
| Manufacturer |  onsemi |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
When connected in the typical common source configuration, bi−directional current flow is possible. The MicroFET 2X2 Package Offers ExceptionalTHERMAL PERFORMANCE
for its physical size and is well suited to linear mode applications.FEATURES
● Max RDS(on) = 90 mW at VGS = −4.5 V, ID = −2.9 A● Max RDS(on) = 130 mW at VGS = −2.5 V, ID = −2.6 A
● Max RDS(on) = 170 mW at VGS = −1.8 V, ID = −1.7 A
● Max RDS(on) = 240 mW at VGS = −1.5 V, ID = −1.0 A
● Low Profile − 0.8 mm Maximum − in the New Package MicroFET™ 2x2 mm
● HBM ESD Protection > 2 kV (Note 3)
● These Devices is Pb−Free, Halide Free and is RoHS Compliant
● Free From Halogenated Compounds and Antimony Oxides
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed −30 V ±8 V A −2.9 −6 PD Power Dissipation TA = 25°C (Note 1a) 1.4 W Power Dissipation TA = 25°C 0.7 (Note 1b) TJ, Tstg Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
