onsemi FDMQ8403
This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge.| Part No. | FDMQ8403 |
|---|---|
| Datasheet | FDMQ8403 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A● Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A
● Substantial Efficiency Benefit in PD Solutions
● This Device is Pb−Free, Halid Free and is RoHS Compliant
APPLICATIONS
● High−Efficiency Bridge Rectifiers MOSFETMAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current A − Continuous (Package Limited) TC = 25°C 6 − Continuous (Silicon Limited) TC = 25°C 9 − Continuous (Note 1a.) TA = 25°C 3.1 − Pulsed 12 PD Power Dissipation TC = 25°C 17 W Power Dissipation (Note 1a.) TA = 25°C 1.9 TJ, TSTG Operating and Storage Junction Temperature −55 to °C Range +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Rating RqJA Ther...
