onsemi FGD3040G2-F085V
N-Channel IGBT
| Part No. | FGD3040G2-F085V |
|---|---|
| Datasheet | FGD3040G2-F085V Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 300 mJ at TJ = 25°C● Logic Level Gate Drive
● AEC−Q101 Qualified and PPAP Capable
● RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● Coil on Plug Application
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Symbol Parameter Value Units BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) Self Clamping Inductive Switching Energy (Note 1) 400 28 300 V V mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 170 mJ IC25 IC110 VGEM Collector Current Continuous at VGE = 5.0 V, TC = 25°C Collector Current Continuous at VGE = 5.0 V, TC = 110°C Gate to Emitter Voltage Continuous 41 A 25.6 A ±10 V PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ Operating Junction and Storage Temperature 150 1 −55 to 175 W W/°C °C TSTG TL Storage Junction Temperature Range Max. Lead Temperature for Soldering (Package Body for 10 s) −55 to 175 300 °C °C TPKG Max.
