onsemi FGH60N60SMD
This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Telecom, ESS VCES 600 V IC 60 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SMD © Semiconductor Components Industries, LLC, 2010 January, 2020 − Rev. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.DESCRIPTION
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.FEATURES
● Maximum Junction Temperature: TJ = 175°C● Positive Temperature Co−efficient for easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
● High Input Impedance
● Fast Switching: EOFF = 7.5 uJ/A
● Tightened Parameter Distribution
● 3 $Y &Z &3 &K FGH60N60SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH60N60SMD/D FGH60N60SMD
ABSOLUTE MAXIMUM RATINGS
SymbolDESCRIPTION
Ratings Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage...