Datasheet4U.com

FGH60N60SMD Datasheet PDF

onsemi FGH60N60SMD

This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Telecom, ESS VCES 600 V IC 60 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SMD © Semiconductor Components Industries, LLC, 2010 January, 2020 − Rev. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
Part No. FGH60N60SMD
Datasheet FGH60N60SMD Download
Manufacturer
onsemi
Description IGBT
Buy Stock & Price
FGH60N60SMD datasheet page 1 preview

DESCRIPTION

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

FEATURES

● Maximum Junction Temperature: TJ = 175°C
● Positive Temperature Co−efficient for easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
● High Input Impedance
● Fast Switching: EOFF = 7.5 uJ/A
● Tightened Parameter Distribution
● 3 $Y &Z &3 &K FGH60N60SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH60N60SMD/D FGH60N60SMD

ABSOLUTE MAXIMUM RATINGS

Symbol

DESCRIPTION

Ratings Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage...
FGH60N60SMD page 2 preview FGH60N60SMD page 3 preview