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FGH60N60SMD Datasheet Field Stop IGBT

Manufacturer: Fairchild (now onsemi)

Overview: FGH60N60SMD — 600 V, 60 A Field Stop IGBT November 2013 FGH60N60SMD 600 V, 60 A Field Stop.

General Description

Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential.

E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate-to-Emitter Voltage Collector Current Collector Current @ TC = 25oC @ TC = 100oC Pulsed Collector Current Diode Forward Current Diode Forward Current @ TC = 25oC @ TC = 100oC Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max.

Key Features

  • Maximum Junction Temperature: TJ = 175oC.
  • Positive Temperaure Co-efficient for easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ. ) @ IC = 60 A.
  • High Input Impedance.
  • Fast Switching: EOFF = 7.5 uJ/A.
  • Tightened Parameter Distribution.
  • RoHS Compliant.

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FGH60N60SMD Distributor