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FGH60N60SMD - IGBT

Datasheet Summary

Description

series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ. ) @ IC = 60 A.
  • High Input Impedance.
  • Fast Switching: EOFF = 7.5 uJ/A.
  • Tightened Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A • High Input Impedance • Fast Switching: EOFF = 7.5 uJ/A • Tightened Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Telecom, ESS www.onsemi.
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