FGH60N60SMD Overview
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential.
FGH60N60SMD Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
- High Input Impedance
- Fast Switching: EOFF = 7.5 uJ/A
- Tightened Parameter Distribution
- This Device is Pb-Free and is RoHS pliant
