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FGH60N60 - IGBT

Download the FGH60N60 datasheet PDF. This datasheet also covers the FGH60N60SMD variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ. ) @ IC = 60 A.
  • High Input Impedance.
  • Fast Switching: EOFF = 7.5 uJ/A.
  • Tightened Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FGH60N60SMD-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FGH60N60SF Field Stop IGBT Fairchild Semiconductor
FGH60N60SFD Field Stop IGBT Fairchild Semiconductor
FGH60N60SMD Field Stop IGBT Fairchild Semiconductor
FGH60N60UFD Field-Stop IGBT Fairchild Semiconductor
FGH60N60UFDTU_F085 IGBT Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FGH60N60SF IGBT
FGH60N60SFD IGBT
FGH60N60SFDTU-F085 IGBT
FGH60N60SMD IGBT
FGH60N60SMD-F085 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A • High Input Impedance • Fast Switching: EOFF = 7.5 uJ/A • Tightened Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Telecom, ESS www.onsemi.