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FGH60N60 Datasheet IGBT

Manufacturer: onsemi

Overview: IGBT - Field Stop 600 V, 60 A FGH60N60SMD.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ. ) @ IC = 60 A.
  • High Input Impedance.
  • Fast Switching: EOFF = 7.5 uJ/A.
  • Tightened Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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