FGH60N60 Datasheet | Specifications & PDF Download

IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generati

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FGH60N60SMD — 600 V, 60 A Field Stop IGBT November 2013 FGH60N60SMD 600 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature: TJ = 175oC

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FGH60N60UFD — 600V, 60A Field Stop IGBT FGH60N60UFD 600V, 60A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =

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IGBT - Field Stop 600 V, 60 A FGH60N60SFD Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum pe

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IGBT - Field Stop 600 V, 60 A FGH60N60SF Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum per

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www.DataSheet.co.kr FGH60N60SFD 600V, 60A Field Stop IGBT August 2008 FGH60N60SFD 600V, 60A Field Stop IGBT Features • High current capability • Lo

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IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs

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FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT FGH60N60UFDTU_F085 600V, 60A Field Stop IGBT Features • High Current Capability • Low Saturation Volta

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www.DataSheet.co.kr FGH60N60SF 600V, 60A Field Stop IGBT July 2008 FGH60N60SF 600V, 60A Field Stop IGBT Features • High current capability • Low sa

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IGBT - Field Stop 600 V, 60 A FGH60N60SMD-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop Trench

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IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generati

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