onsemi HGTG30N60A4
The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.| Part No. | HGTG30N60A4 |
|---|---|
| Datasheet | HGTG30N60A4 Download |
| Manufacturer |  onsemi |
| Description | SMPS IGBT |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● 60 A, 600 V @ TC = 110°C● Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 30 A
● Typical Fall Time: 58 ns at TJ = 125°C
● Low Conduction Loss
● This is a Pb−Free Device
APPLICATIONS
● UPS, Welder C G E EC G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G30N60A4 © Semiconductor Components Industries, LLC, 2005 February, 2020 − Rev. 3 $Y &Z &3 &K G30N60A4 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: HGTG30N60A4/D HGTG30N60A4ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Parameter Symbol Ratings Unit Collector to Emitter Voltage Collector Current Continuous TC = 25°C TC = 110°C BVCES IC 600 V 75 A 60 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C, Figure 2 Power Dissipation T...
