HGTG30N60A4 Datasheet | Fairchild Semiconductor

Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49343. Features - >100k Hz Operation at 390V, 30A - 200k Hz Operation at 390V, 18A - 600V Switching SOA Capability - Typical Fall Time- - - . . 60ns at TJ = 125o C - Low Conduction Loss Ordering Information PART NUMBER HGTG30N60A4 NOTE: PACKAGE TO-247 BRAND G30N60A4 Packaging JEDEC STYLE TO-247 When ordering, use the entire part number. Symbol COLLECTOR (BACK METAL) FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2003 Fairchild Semiconductor Corporation HGTG30N60A4 Rev....