HGTG30N60A4D Datasheet | Fairchild Semiconductor

Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345. Ordering Information PART NUMBER PACKAGE BRAND TO-247 30N60A4D NOTE: When ordering, use the entire part number. Symbol Features - >100k Hz Operation At 390V, 30A - 200k Hz Operation At 390V, 18A - 600V Switching SOA Capability - Typical Fall Time- - - . . 60ns at TJ = 125o C - Low Conduction Loss - Temperature pensating SABER™ Model .fairchildsemi. Packaging JEDEC STYLE TO-247 COLLECTOR (FLANGE) FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792...