HGTG30N60C3D
features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.
Features
- 63A, 600V at TC = 25o C
- Typical Fall Time
- -
- . 230ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER HGTG30N60C3D PACKAGE TO-247 BRAND G30N60C3D
NOTE: When ordering, use the entire part number.
Symbol
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S....
