HGTG30N60A4D
HGTG30N60A4D is N-Channel IGBT manufactured by onsemi.
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V
The HGTG30N60A4D is a MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The much lower on- state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti- parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Features
- >100 k Hz Operation 390 V, 30 A
- 200 k Hz Operation 390 V, 18 A
- 600 V Switching SOA Capability
- Typical Fall Time 60 ns at TJ = 125°C
- Low Conduction Loss
- Temperature pensating Saber™ Model
- This is a Pb- Free Device
.onsemi. C
G E EC G
COLLECTOR (FLANGE)
TO- 247- 3LD SHORT LEAD CASE 340CK JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K 30N60A4D
$Y &Z &3 &K 30N60A4D
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
© Semiconductor ponents Industries, LLC, 2004
April, 2020
- Rev. 2
Publication Order Number:...
