HGTG30N60C3D
Key Features
- 63 A, 600 V at TC = 25°C
- Typical Fall Time 230 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti−Parallel Diode
- This is a Pb−Free Device
- Part: HGTG30N60C3D
- Description: N-Channel IGBT
- Manufacturer: onsemi
- Size: 425.71 KB