HGTG30N60B3D
HGTG30N60B3D is N-Channel IGBT manufactured by onsemi.
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
60 A, 600 V
The HGTG30N60B3D is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The much lower on- state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti- parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49172.
Features
- 60 A, 600 V, TC = 25°C
- 600 V Switching SOA Capability
- Typical Fall Time 90 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti- Parallel Diode
- This is a Pb- Free Device
.onsemi. C
G E EC G
TO- 247- 3LD SHORT LEAD CASE 340CK JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K G30N60B3D
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
G30N60B3D = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
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