HGTG30N60B3D
HGTG30N60B3D is N-Channel IGBT manufactured by Intersil.
Data Sheet January 2000 File Number 4446.2
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172.
Features
- 60A, 600V, TC = 25o C
- 600V Switching SOA Capability
- Typical Fall Time-
- - . . 90ns at TJ = 150o C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER HGTG30N60B3D PACKAGE TO-247 BRAND G30N60B3D
NOTE: When ordering, use the entire part number.
Symbol
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation...
