HGTG30N60B3D Datasheet
HGTG30N60B3D Datasheet (Intersil)
Intersil
HGTG30N60B3D Data Sheet January 2000 File Number 4446.2 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in .
HGTG30N60B3D Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used .
HGTG30N60B3D Datasheet (onsemi)
onsemi
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar t.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
*state conduction loss of a bipolar transistor. The much lower on
*state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in .