HGTG30N60B3 Overview
Key Specifications
Package: TO-247
Mount Type: Through Hole
Pins: 3
Height: 20.82 mm
Description
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies.
Key Features
- 30 A, 600 V, TC = 110°C
- Low Saturation Voltage: VCE(SAT) = 1.45 V @ IC = 30 A
- Typical Fall Time . . . . . . . . . . . . . 90 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
