HGTG30N60B3
HGTG30N60B3 is IGBT manufactured by onsemi.
IGBT
- NPT
600 V
Description The HGTG30N60B3 bines the best Features of high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies.
Features
- 30 A, 600 V, TC = 110°C
- Low Saturation Voltage: VCE(SAT) = 1.45 V @ IC = 30 A
- Typical Fall Time
- - . . . 90 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- This Device is Pb- Free
.onsemi.
VCES 1200 V
IC 30 A
TO- 247- 3LD CASE 340CK MARKING DIAGRAM
$Y&Z&3&K G30N60B3
© Semiconductor ponents Industries, LLC, 2001
March, 2020
- Rev. 3
$Y &Z &3 &K G30N60B3
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number:...
