| Part Number | HGTG30N60B3 Datasheet |
|---|---|
| Manufacturer | Intersil |
| Overview | HGTG30N60B3 Data Sheet January 2000 File Number 4444.2 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bip. of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications op. |
HGTG30N60B3 Datasheet and Specifications PDF
The HGTG30N60B3 is a N-Channel IGBT.
| Part Number | HGTG30N60B3 Datasheet |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | Fairchild Semiconductor |
| Overview | HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. Th. of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications op. |
| Part Number | HGTG30N60B3 Datasheet |
|---|---|
| Description | IGBT |
| Manufacturer | onsemi |
| Overview |
The HGTG30N60B3 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applicati.
of high input
impedance of a MOSFET and the low on *state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. Features * 30. |