HGTG30N60A4 Overview
Key Specifications
Package: TO-247
Mount Type: Through Hole
Pins: 3
Height: 24.75 mm
Description
The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
Key Features
- 60 A, 600 V @ TC = 110°C
- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 30 A
- Typical Fall Time: 58 ns at TJ = 125°C
- Low Conduction Loss
- This is a Pb-Free Device
