HGTG30N60A4 Datasheet
HGTG30N60A4 Datasheet (Intersil)
Intersil
HGTG30N60A4 Data Sheet January 2000 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar t.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications o.
HGTG30N60A4 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar tr.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications o.
HGTG30N60A4 Datasheet (onsemi)
onsemi
The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applicat.
of high input
impedance of a MOSFET and the low on
*state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.
F.