HGTG30N60A4D Datasheet and Specifications PDF

HGTG30N60A4D Data Sheet January 2000 File Number 4830 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the .

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in .

Data Sheet HGTG30N60A4D September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features .

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in .

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG30N60A4D The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar trans.

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
*state conduction loss of a bipolar transistor. The much lower on
*state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in .