Datasheet Summary
Data Sheet January 2000 File Number 4830
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential....
