onsemi HUF75645P3
N-Channel UltraFET Power MOSFET
FEATURES
● Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V● Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and Saber Thermal Impedance Models -
● Peak Current vs Pulse Width Curve
● UIS Rating Curve Ordering Information PART NUMBER HUF75645P3 HUF75645S3ST PACKAGE TO-220AB TO-263AB BRAND 75645P 75645S
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous Continuous (TC= (TC= 2150o0CoC, ,VVGGSS==101V0V) )(F(Figiugruere2)2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .