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HUF75645P3 - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and Saber Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Ordering Information PART NUMBER HUF75645P3 HUF75645S3ST.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) HUF75645P3 GATE SOURCE DRAIN (FLANGE) HUF75645S3ST Symbol D G S HUF75645P3, HUF75645S3S October 2013 Features • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and Saber Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PART NUMBER HUF75645P3 HUF75645S3ST PACKAGE TO-220AB TO-263AB BRAND 75645P 75645S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75645P3, HUF75645S3ST UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . .