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HUF75645P3 - N-Channel MOSFET

Key Features

  • JEDEC TO-263AB DRAIN (FLANGE).
  • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www. semi. intersil. com.
  • Peak Current vs Pulse Width Curve GATE SOURCE DRAIN (FLANGE) HUF75645P3 HUF75645S3S.
  • UIS Rating Curve Symbol D Ordering Information PART NUMBER HUF75645P3 HUF75645S3S G.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF75645P3, HUF75645S3S Data Sheet July 1999 File Number 4722.1 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features JEDEC TO-263AB DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.semi.intersil.com • Peak Current vs Pulse Width Curve GATE SOURCE DRAIN (FLANGE) HUF75645P3 HUF75645S3S • UIS Rating Curve Symbol D Ordering Information PART NUMBER HUF75645P3 HUF75645S3S G PACKAGE TO-220AB TO-263AB BRAND 75645P 75645S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75645S3ST.