onsemi MMDF2P01HD
Power MOSFET
MMDF2P01HD Specifications
- Drain-Source Resistance : 200mΩ
- Min Breakdown Voltage : 12V
- Terminals : 8
- Max Power Dissipation : 1.5W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | MMDF2P01HD |
|---|---|
| Datasheet | MMDF2P01HD Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) (Note 1.) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (Note 2.) VDSS VDGR VGS ID ID IDM PD 12 12 ± 8.0 3.4 2.1 17 2.0 Vdc Vdc Vdc Adc Apk Watts Operating and Storage Temperature Range − 55 to 150 °C Thermal Resistance − Junction to Ambient (Note 2.) RθJA 62.5 °C/W Maximum Lead Temperature for Soldering TL Purposes, 1/8″ from case for 10 seconds 260 °C 1. Negative sign for P−Channel device omitted for clarity. 2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10 sec. max. 2 AMPERES 12 VOLTS RDS(on) = 180 mW P−Channel D G S MARKING DIAGRAM 8 SO−8, Dual CASE 751 STYLE 11 D2P01 LYWW 1 D2P01 L Y WW = Device Code = Location Code = Year = Work Week PIN ASSIGNMEN...
