Datasheet4U Logo Datasheet4U.com

MMDF2P01HD - Dual MOSFET

Key Features

  • circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2000 Ciss VDS = 0 V VGS = 0 V TJ = 25°C 1600 C,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMDF2P01HD Power MOSFET ON Semiconductor
MMDF2P02E Power MOSFET ON Semiconductor
MMDF2P02HD Power MOSFET ON Semiconductor
MMDF2P03HD Power MOSFET ON Semiconductor
MMDF2C02E Power MOSFET ON Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MMDF2P02E Dual MOSFET
MMDF2P02HD Dual MOSFET
MMDF2C01HD Dual MOSFET
MMDF2C02E Dual MOSFET
MMDF2C02HD Dual MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2P01HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF2P01HD Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.