MMDF2P02E - Dual MOSFET

Motorola Semiconductor (now NXP Semiconductors)

Key Features

600 8 400 Crss Ciss Coss Crss 200 0 10 3 Q3 4 ID = 2 A TJ = 25°C 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) 10 0 12 30 5 0 5 10 15 20 25 VGS VDS GATE.
TO.
SOURCE OR DRAIN.
TO.
SOURCE.

MMDF2P02E dual mosfet by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MMDF2P02E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	274.03 KB
Description	Dual MOSFET
Datasheet	MMDF2P02E Datasheet

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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Order this document by MMDF2P02E/D ™ Data Sheet Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors MMDF2P02E MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.