Datasheet4U Logo Datasheet4U.com

MMDF2P02HD Datasheet Dual MOSFET

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2P02HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF2P02HD Motorola Preferred Device TMOS P-Channel Field Effect.

Key Features

  • resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are in.

MMDF2P02HD from other manufacturers

Brand Logo Part Number Description Other Manufacturers
ON Semiconductor Logo MMDF2P02HD 20V 2A Power MOSFET ON Semiconductor
ON Semiconductor Logo MMDF2P02HDR2G 20V 2A Power MOSFET ON Semiconductor
VBsemi Logo MMDF2P02HDR2G Dual P-Channel 30-V MOSFET VBsemi
ON Semiconductor Logo MMDF2P02E Power MOSFET ON Semiconductor

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MMDF2P02E Dual MOSFET
MMDF2P01HD Dual MOSFET
MMDF2C01HD Dual MOSFET
MMDF2C02E Dual MOSFET
MMDF2C02HD Dual MOSFET
MMDF2C03HD Dual MOSFET
MMDF2N02E Dual MOSFET
MMDF2N05ZR2 Dual MOSFET
MMDF2N06V Dual MOSFET
MMDF2N06VL Dual MOSFET

MMDF2P02HD Distributor