NTC020N120SC1 Datasheet - onsemi

NTC020N120SC1 SiC MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie.

NTC020N120SC1 Features

* 1200 V @ TJ = 175°C

* Typ RDS(on) = 20 mW at VGS = 20 V, ID = 60 A

* High Speed Switching with Low Capacitance

* 100% UIL Tested

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (on second level interconnection) Applicat

NTC020N120SC1 Datasheet (167.62 KB)