QPB1006 Key Features
- Frequency: 2.0
- 7.5 GHz
- Saturated Output Power: 150 watts (nom.)
- Small Signal Gain: 30 dB
- Bias Conditions: +28 V single supply, IDQ = 9.6A
- Included gate and drain voltage generation
- Included gate and drain voltage sequencing
- Part: QPB1006
- Manufacturer: Qorvo
- Size: 1.87 MB
Related Qorvo Datasheets
| Part Number | Description |
|---|---|
| QPB0206N | 2 - 6GHz GaN Amplifier |
| QPB0218N | 2 - 18GHz GaN Power Amplifier |
| QPB0220 | Wideband GaN SSPA |
| QPB0220N | 2-18GHz Wideband GaN Amplifier |
| QPB2731N | 27.5 - 31GHz Ka-Band GaN Amplifier |
QPB1006 Description
The QPB1006 is a high power connectorized SSPA module with bias circuit card suitable for installation into OEM assemblies. The amplifier requires +28 Volts DC and customer supplied thermal management. The device is an excellent candidate for high power test equipment, munications, jamming applications, or any application requiring capability for simultaneous power amplification of signals across the 2.0 7.5 GHz...