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PE2317 - P-Channel Enhancement Mode Power MOSFET

Description

The PE2317 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -6A RDS(ON) = 35 m Ω @ VGS=-2.5V RDS(ON) = 25 m Ω @ VGS=-4.5V D G S Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Datasheet preview – PE2317

Datasheet Details

Part number PE2317
Manufacturer semi one
File Size 244.72 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2317 Datasheet
Additional preview pages of the PE2317 datasheet.

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Full PDF Text Transcription

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PE2317 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2317 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -6A RDS(ON) = 35 m Ω @ VGS=-2.5V RDS(ON) = 25 m Ω @ VGS=-4.
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