PE2317 Datasheet | semi one

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2317 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL Features - VDS = -20V,ID = -6A RDS(ON) = 35 m Ω @ VGS=-2.5V RDS(ON) = 25 m Ω @ VGS=-4.5V S Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Marking and pin Assignment Application - PWM applications - Load switch - Power management SOT-23-3 top...