PE2317T Datasheet | ChipSourceTek

PE2317T P-Channel Enhancement Mode Power MOSFET PE2317T Description The PE2317T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE2317T General Features - VDS = -20V, ID = -7A Schematic diagram RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 35mΩ @ VGS=-3V RDS(ON) < 38mΩ @ VGS=-2.5V - High Power and current handing capability 技 k - Lead free product is acquired - Surface Mount Package e PE2317T Application - PWM applications 科 T - Load switch - Power management Marking and pin assignment 源特 urce SOT-23-3L o PE2317T...