Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
Description
The PE2319 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS > -18V, ID = -7A
RDS(ON) < 21mΩ @ VGS=-4.5V RDS(ON) < 28mΩ @ VGS=-2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- PWM applications
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- Load switch k
- Power management
Marking and pin assignment
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