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PE2319 - P-Channel Enhancement Mode Power MOSFET

Download the PE2319 datasheet PDF. This datasheet also covers the PE2319-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE2319 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS > -18V, ID = -7A RDS(ON) < 21mΩ @ VGS=-4.5V RDS(ON) < 28mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE2319-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE2319
Manufacturer ChipSourceTek
File Size 797.05 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2319 Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE2301A P-Channel Enhancement Mode Power MOSFET
PE2302A N-Channel Enhancement Mode Power MOSFET
PE2306A Enhancement Mode Power MOSFET
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PE2012 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE2319 P-Channel Enhancement Mode Power MOSFET Description The PE2319 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS > -18V, ID = -7A RDS(ON) < 21mΩ @ VGS=-4.5V RDS(ON) < 28mΩ @ VGS=-2.