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PE2312 - Dual P & N-Channel Enhancement Mode Power MOSFET

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semi one

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PE2312 Dual P & N-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PE2312

Datasheet Details

Part number	PE2312
Manufacturer	semi one
File Size	1.90 MB
Description	Dual P & N-Channel Enhancement Mode Power MOSFET
Datasheet	PE2312 Datasheet
Additional preview pages of the PE2312 datasheet.

Product details

Description

The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V.
N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V.

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Published: Dec 3, 2018 |