Datasheet Details
| Part number | PE2312 |
|---|---|
| Manufacturer | semi one |
| File Size | 1.90 MB |
| Description | Dual P & N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 PE2312 Datasheet
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General Description
The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
Key Features
- P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V.
- N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V.