PE2312
PE2312 is Dual P & N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
Dual Enhancement Mode Power MOSFET (N- and P- Channel)
DESCRIPTION
The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
(6)D1
(1)G1
(3)G2
(4)D2
GENERAL Features
- P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V
- N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V
Application
- PWM applications
- Load switch
- Power management
(5)S1
(2)S2
N-Channel MOSFET P-Channel MOSFET Schematic diagram
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